PART |
Description |
Maker |
NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution... M/A-COM Technology Solu...
|
NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu... List of Unclassifed Man...
|
WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|